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AO6408L PDF预览

AO6408L

更新时间: 2024-11-21 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 142K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO6408L 数据手册

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AO6408  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6408 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. It offers  
operation over a wide gate drive range from 1.8V to  
12V. It is ESD protected. This device is suitable for  
use as a load switch. Standard product AO6408 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO6408L is a Green Product ordering option.  
VDS (V) = 20V  
ID = 8.8A  
(VGS = 10V)  
R
R
R
R
DS(ON) < 18m(VGS = 10V)  
DS(ON) < 20m(VGS = 4.5V)  
DS(ON) < 25m(VGS = 2.5V)  
DS(ON) < 32m(VGS = 1.8V)  
ESD Rating: 2000V HBM  
AO6408 and AO6408L are electrically identical.  
D
TSOP-6  
Top View  
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
20  
V
V
VGS  
±12  
TA=25°C  
TA=70°C  
8.8  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
7
40  
IDM  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
47.5  
74  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Steady-State  
Steady-State  
RθJL  
37  
Alpha & Omega Semiconductor, Ltd.  

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