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AO6414 PDF预览

AO6414

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 135K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO6414 数据手册

 浏览型号AO6414的Datasheet PDF文件第2页浏览型号AO6414的Datasheet PDF文件第3页浏览型号AO6414的Datasheet PDF文件第4页 
AO6414  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6414 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. It  
offers operation over a wide gate drive range from  
2.5V to 12V. This device is suitable for use as a load  
switch. Standard product AO6414 is Pb-free (meets  
ROHS & Sony 259 specifications). AO6414L is a  
Green Product ordering option. AO6414 and  
AO6414L are electrically identical.  
VDS (V) = 55V  
ID = 2.4A (VGS = 4.5V)  
R
R
DS(ON) < 160mΩ (VGS = 4.5V)  
DS(ON) < 200mΩ (VGS = 2.5V)  
D
TSOP-6  
Top View  
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
55  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±12  
TA=25°C  
TA=70°C  
2.3  
1.9  
ID  
A
Pulsed Drain Current B  
IDM  
9
TA=25°C  
TA=70°C  
1.56  
1.1  
PD  
W
Power Dissipation  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
58  
Max  
80  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
94  
37  
120  
50  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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