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AO6405_11 PDF预览

AO6405_11

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 506K
描述
30V P-Channel MOSFET

AO6405_11 数据手册

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AO6405  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-30V  
The AO6405 uses advanced trench technology to provide  
excellent RDS(ON) with low gate charge. This device is  
suitable for use as a load switch or in PWM applications.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
-5A  
< 52m  
< 87mΩ  
RDS(ON) (at VGS = 4.5V)  
TSOP6  
D
Top View  
Bottom View  
Top View  
6
1
D
D
D
D
2
3
5
4
G
G
S
S
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
-30  
±20  
V
V
VGS  
TA=25°C  
TA=70°C  
-5  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
-4.2  
-20  
A
IDM  
PD  
TA=25°C  
TA=70°C  
2
W
°C  
Power Dissipation B  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
47.5  
74  
Max  
62.5  
110  
50  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
37  
Rev 5: Nov 2011  
www.aosmd.com  
Page 1 of 5  

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