Datasheet > AO6409A

AO6409A

更新时间： 2024-09-13 12:23:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	372K
描述
20V P-Channel MOSFET

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AO6409A 数据手册

AO6409A

20V P-Channel MOSFET

General Description

The AO6409A uses advanced trench technology to

provide excellent R

_DS(ON), low gate charge and operation

with gate voltages as low as 1.8V. This device is suitable

for use as a load switch applications.

Features

V_DS

-20V

I_D(at V_GS=-4.5V)

-5.5A

_DS(ON)(at V_GS= -4.5V)

< 41mΩ

< 53mΩ

< 65mΩ

R_DS(ON)(at V_GS= -2.5V)

R_DS(ON)(at V_GS= -1.8V)

ESD protected

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

V_GS

±8

-5.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-4

Pulsed Drain Current ^C

I_DM

P_D

-30

T_A=25°C

T_A=70°C

2.1

°C

Power Dissipation ^B

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

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