AO6404

更新时间： 2024-11-18 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	112K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO6404 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	1.37
Base Number Matches：	1

AO6404 数据手册

AO6404

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6404 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected.

Standard Product AO6404 is Pb-free (meets ROHS

& Sony 259 specifications). AO6404L is a Green

Product ordering option. AO6404 and AO6404L are

electrically identical.

V_DS(V) = 20V

I_D= 8.6A (V_GS= 10V)

R_DS(ON)< 17mΩ (V_GS= 10V)

R_DS(ON)< 18mΩ (V_GS= 4.5V)

R_DS(ON)< 24mΩ (V_GS= 2.5V)

R_DS(ON)< 33mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TSOP-6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

8.6

T_A=25°C

T_A=70°C

I_D

6.8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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