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AO6403 PDF预览

AO6403

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 112K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO6403 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
风险等级:5.56Base Number Matches:1

AO6403 数据手册

 浏览型号AO6403的Datasheet PDF文件第2页浏览型号AO6403的Datasheet PDF文件第3页浏览型号AO6403的Datasheet PDF文件第4页 
AO6403  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6403 uses advanced trench technology to  
provide excellent RDS(ON), and ultra-low low gate  
charge. This device is suitable for use as a load  
switch or in PWM applications. It may be used in  
common-drain configuration to form a bidirectional  
blocking switch. AO6403 is Pb-free (meets ROHS &  
Sony 259 specifications). AO6403L is a Green  
Product ordering option. AO6403 and AO6403L are  
electrically identical.  
VDS (V) = -30V  
ID = -6 A (VGS = -10V)  
R
DS(ON) < 35m(VGS = -10V)  
DS(ON) < 58m(VGS = -4.5V)  
R
D
TSOP6  
Top View  
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
V
A
TA=25°C  
TA=70°C  
-6  
ID  
-5  
-30  
Pulsed Drain Current B  
IDM  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation A  
1.44  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
47.5  
74  
Max  
62.5  
110  
50  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
RθJL  
37  
Alpha & Omega Semiconductor, Ltd.  

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