Datasheet > AO6401

AO6401

更新时间： 2024-11-18 12:52:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
3页	287K
描述
P-Channel 20-V (D-S) MOSFET High power and current handling capability

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AO6401 数据手册

Freescale

AO6401/MC6401

P-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)m(Ω)

I_D(A)

-4.9

56 @ V_GS= -4.5V

80 @ V_GS= -2.5V

-26.5

-4.2

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature TSOP-6 Surface Mount Package

Saves Board Space

High power and current handling capability

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-26.5

±12

T_A=25^oC

T_A=70^oC

-4.9

-4.0

±20

-1.7

2.0

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

1.3

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Units

^oC/W

Maximum

62.5

Maximum Junction-to-Ambient^a

t <= 5 sec

R_θJA

110

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

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