AO6401L

更新时间： 2024-11-18 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO6401L 数据手册

AO6401

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6401 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO6401 is Pb-free

(meets ROHS & Sony 259 specifications). AO6401L

is a Green Product ordering option. AO6401 and

AO6401L are electrically identical.

V_DS(V) = -30V

I_D= -5 A (V_GS= -10V)

R_DS(ON)< 49mΩ (V_GS= -10V)

R_DS(ON)< 64mΩ (V_GS= -4.5V)

R_DS(ON)< 119mΩ (V_GS= -2.5V)

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

-5

T_A=25°C

T_A=70°C

I_D

-4.2

Pulsed Drain Current ^B

I_DM

-30

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

47.5

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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