Datasheet > AO6401A_11

AO6401A_11

更新时间： 2024-09-16 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	242K
描述
30V P-Channel MOSFET

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AO6401A_11 数据手册

AO6401A

30V P-Channel MOSFET

General Description

Product Summary

V_DS

-30V

The AO6401A uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 2.5V. This device is suitable

for use as a load switch or in PWM applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

-5A

< 47mΩ

< 64mΩ

< 85mΩ

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-30

V_GS

±12

T_A=25°C

T_A=70°C

-5

Continuous Drain

Current

I_D

-4

-28

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

47.5

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 1: Mar 2011

www.aosmd.com

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