Datasheet > AO6401A

AO6401A

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	450K
描述
种类:P-Channel;漏源电压（Vdss）:-12V;持续漏极电流（Id）（在25°C时）:-4.3A;Vgs(th)(V):±8;漏源导通电阻:50mΩ@-4.5V

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AO6401A 数据手册

UMW

AO6401

30V P-Channel MOSFET

General Description

The AO6401A uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM

applications.

Product Summary

VDS (V) = 30V

I_D= -5A

(V_GS= 10V)

(VGS = 10V)

47m

RDS(ON)

64m

85m

(VGS = 4.5V)

RDS(ON)

(VGS = 2.5V)

SOT23-6

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-30

±12

T_A=25°C

T_A=70°C

-5

Continuous Drain

Current

I_D

-4

-28

Pulsed Drain Current ^C

I_DM

P_D

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Symbol

Typ

47.5

Max

62.5

110

Units

°C/W

≤ 10s

R_θJA

Steady-State

R_θJL

www.umw-ic.com

UTD Semiconductor Co.,Limited

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