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AO6402

更新时间: 2024-11-21 12:54:07
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 2166K
描述
30V N-Channel MOSFET

AO6402 数据手册

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万和兴电子有限公司 www.whxpcb.com  
AO6402  
30V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
30V  
The AO6402 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. This device may  
be used as a load switch or in PWM applications.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS =4.5V)  
5A  
< 31m  
< 43mΩ  
TSOP6  
D
Top View  
Bottom View  
S
Pin1  
Absolute Maximum Ratings T
Parameter  
um  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
5
V
V
Continuous Drain  
Current  
4
A
Pulsed Drain Current C  
20  
1.25  
TA=2
TA=70°C  
W
°C  
Power Dissipation B  
0.8  
Junction and Storage Temperature
STG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
82  
Max  
100  
130  
70  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
110  
56  
RθJL  
Rev 8: February 2011  
www.aosmd.com  
Page 1 of 5  

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