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AO6402A PDF预览

AO6402A

更新时间: 2024-11-21 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 279K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO6402A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.66
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏源导通电阻:0.027 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO6402A 数据手册

 浏览型号AO6402A的Datasheet PDF文件第2页浏览型号AO6402A的Datasheet PDF文件第3页浏览型号AO6402A的Datasheet PDF文件第4页浏览型号AO6402A的Datasheet PDF文件第5页 
AO6402A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
TheꢀAO6402A/Lꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto  
provideꢀexcellentꢀRDS(ON)ꢀandꢀlowꢀgateꢀcharge.ꢀThis  
deviceꢀisꢀsuitableꢀforꢀuseꢀasꢀaꢀloadꢀswitchꢀorꢀinꢀPWM  
applications.ꢀTheꢀsourceꢀleadsꢀareꢀseparatedꢀtoꢀallow  
aꢀKelvinꢀconnectionꢀtoꢀtheꢀsource,ꢀwhichꢀmayꢀbe  
usedꢀtoꢀbypassꢀtheꢀsourceꢀinductance.  
VDSꢀ(V)ꢀ=ꢀ30V  
IDꢀ=ꢀ7Aꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ(V GSꢀ=ꢀ10V)  
RDS(ON)ꢀ<ꢀ27mΩ  
(VGSꢀ=ꢀ10V)  
RDS(ON)ꢀ<ꢀ40mΩ  
ꢀ(VGSꢀ=ꢀ4.5V)  
AO6402AꢀandꢀAO6402ALꢀareꢀelectricallyꢀidentical.  
ꢁRoHSꢀCompliant  
ꢁAO6402ALꢀisꢀHalogenꢀFree  
TSOP-6  
D
Top View  
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
DrainꢁSourceꢀVoltage  
VDS  
30  
V
GateꢁSourceꢀVoltage  
VGS  
±20  
7.0  
V
A
TA=25°C  
TA=70°C  
ContinuousꢀDrain  
CurrentꢀA,F  
PulsedꢀDrainꢀCurrentꢀB  
ID  
5.6  
IDM  
30  
TA=25°C  
TA=70°C  
2.0  
PD  
W
PowerꢀDissipation  
1.28  
ꢁ55ꢀtoꢀ150  
JunctionꢀandꢀStorageꢀTemperatureꢀRange  
TJ,ꢀTSTG  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
MaximumꢀJunctionꢁtoꢁAmbientA  
MaximumꢀJunctionꢁtoꢁAmbientA  
tꢀꢀ≤ꢀ10s  
RθJA  
SteadyꢁState  
SteadyꢁState  
74  
MaximumꢀJunctionꢁtoꢁLeadꢀC  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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