Datasheet > AO6402A_12

AO6402A_12

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	224K
描述
30V N-Channel MOSFET

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AO6402A_12 数据手册

AO6402A

30V N-Channel MOSFET

General Description

Product Summary

The AO6402A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

V_DS(V) = 30V

I_D= 7.5A

R_DS(ON)< 24mΩ

R_DS(ON)< 35mΩ

(V_GS= 10V)

(V_GS= 4.5V)

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

7.5

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A,F

I_D

6.0

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

2.0

P_D

°C

Power Dissipation

1.28

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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