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AO6402AL PDF预览

AO6402AL

更新时间: 2024-11-18 12:52:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 栅极
页数 文件大小 规格书
2页 229K
描述
N-Channel 30V (D-S) MOSFET Low Gate Charge Fast Switch

AO6402AL 数据手册

 浏览型号AO6402AL的Datasheet PDF文件第2页 
Freescale  
AO6402AL /MC6402AL  
N-Channel 30V (D-S) MOSFET  
These miniature surface mount MOSFETs  
utilize High Cell Density process. Low rDS(on)  
assures minimal power loss and conserves  
energy, making this device ideal for use in  
power management circuitry. Typical  
applications are power switch, power  
management in portable and battery-powered  
products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
Low rDS(on) Provides Higher Efficiency and  
Extends Battery Life  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
ID (A)  
6.3  
5.4  
0.032 @ VGS = 10 V  
0.044 @ VGS = 4.5V  
30  
1
2
3
6
5
4
Low Gate Charge  
Fast Switch  
Miniature TSOP-6 Surface Mount Package  
Saves Board Space  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
±20  
V
TA=25oC  
TA=70oC  
6.3  
5.1  
±30  
1.7  
2.0  
1.3  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
A
W
oC  
TA=25oC  
TA=70oC  
PD  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta  
Symbol Maximum Units  
t <= 5 sec  
Steady-State  
62.5  
oC/W  
RTHJA  
110  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
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