Datasheet > AO6402A

AO6402A

更新时间： 2024-11-22 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	481K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:7.5A;Vgs(th)(V):±20;漏源导通电阻:24mΩ@10V;漏源导通电阻:35mΩ@4.5V

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AO6402A 数据手册

UMW

AO6402A

30V N-Channel MOSFET

General Description

The AO6402A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

Features

VDS (V) = 30V

I_D= 7.5A

RDS(ON)

(V_GS= 10V)

(VGS = 10V)

(VGS = 4.5V)

24m

35m

RDS(ON)

SOT23-6

Absolute Maximum Ratings

=25

nless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

7.5

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A,F

I_D

6.0

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

2.0

P_D

°C

Power Dissipation

1.28

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

62.5

110

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

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UTD Semiconductor Co.,Limited

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