AO6401

更新时间： 2024-11-18 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO6401 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.54
Is Samacsys：	N	Base Number Matches：	1

AO6401 数据手册

AO6401

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6401 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO6401 is Pb-free

(meets ROHS & Sony 259 specifications). AO6401L

is a Green Product ordering option. AO6401 and

AO6401L are electrically identical.

V_DS(V) = -30V

I_D= -5 A (V_GS= -10V)

R_DS(ON)< 49mΩ (V_GS= -10V)

R_DS(ON)< 64mΩ (V_GS= -4.5V)

R_DS(ON)< 119mΩ (V_GS= -2.5V)

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

-5

T_A=25°C

T_A=70°C

I_D

-4.2

Pulsed Drain Current ^B

I_DM

-30

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

47.5

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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与AO6401相关器件

型号	品牌	获取价格	描述	数据表
AO6401 (KO6401)	KEXIN	获取价格	P-Channel MOSFET
AO6401_11	AOS	获取价格	30V P-Channel MOSFET
AO6401A	FREESCALE	获取价格	30V P-Channel MOSFET
AO6401A	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO6401A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-12V;持续漏极电流（Id）（在25°C
AO6401A (KO6401A)	KEXIN	获取价格	P-Channel MOSFET
AO6401A_11	AOS	获取价格	30V P-Channel MOSFET
AO6401L	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO6402	AOS	获取价格	30V N-Channel MOSFET
AO6402 (KO6402)	KEXIN	获取价格	N-Channel MOSFET