Datasheet > AO6400L

AO6400L

更新时间： 2024-11-18 21:22:11

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	108K
描述
Transistor

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技术参数
数据手册

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AO6400L 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

AO6400L 数据手册

AO6400

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6400/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. AO6400 and AO6400L are electrically

identical.

V_DS(V) = 30V

I_D= 6.9 A

(V_GS= 10V)

_DS(ON)< 28mΩ (V_GS= 10V)

_DS(ON)< 33mΩ (V_GS= 4.5V)

_DS(ON)< 52mΩ (V_GS= 2.5V)

-RoHS Compliant

-AO6400L is Halogen Free

Rg,Ciss,Coss,Crss Tested

TSOP-6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

6.9

T_A=25°C

T_A=70°C

I_D

5.8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

47.5

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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与AO6400L相关器件

型号	品牌	获取价格	描述	数据表
AO6401	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO6401	FREESCALE	获取价格	P-Channel 20-V (D-S) MOSFET High power and current handling capability
AO6401 (KO6401)	KEXIN	获取价格	P-Channel MOSFET
AO6401_11	AOS	获取价格	30V P-Channel MOSFET
AO6401A	FREESCALE	获取价格	30V P-Channel MOSFET
AO6401A	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AO6401A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-12V;持续漏极电流（Id）（在25°C
AO6401A (KO6401A)	KEXIN	获取价格	P-Channel MOSFET
AO6401A_11	AOS	获取价格	30V P-Channel MOSFET
AO6401L	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor