Datasheet > AO4821

AO4821

更新时间： 2024-10-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
5页	411K
描述
12V Dual P-Channel MOSFET

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AO4821 数据手册

AO4821

12V Dual P-Channel MOSFET

General Description

The AO4821 uses advanced trench technology to provide

excellent R_DS(ON)

, low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a load switch.

Features

V_DS

-12V

I_D(at V_GS=-4.5V)

-9A

_DS(ON)(at V_GS=-4.5V)

< 19mΩ

< 24mΩ

< 30mΩ

R_DS(ON)(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-1.8V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-12

±8

-9

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

-7

Pulsed Drain Current ^C

I_DM

P_D

-60

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

1.28

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

62.5

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

1/5

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