Datasheet > AO4828_10

AO4828_10

更新时间： 2024-11-18 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	173K
描述
60V Dual N-Channel MOSFET

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AO4828_10 数据手册

AO4828

60V Dual N-Channel MOSFET

General Description

Features

The AO4828 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

V_DS(V) = 60V

I_D= 4.5A (V_GS= 10V)

R_DS(ON)< 56mΩ (V_GS= 10V)

_DS(ON)< 77mΩ (V_GS= 4.5V)

100% UIS tested

100% Rg tested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±20

4.5

Gate-Source Voltage

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

I_D

3.6

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

Avalanche Current ^B

1.28

°C

I_AR,I_AS

Repetitive avalanche energy 0.1mH ^B

E_AR,E_AS

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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