AO4824

更新时间： 2024-11-16 21:54:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	136K
描述
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4824 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.56
Is Samacsys：	N	Base Number Matches：	1

AO4824 数据手册

AO4824

Asymmetric Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

Features

The AO4824 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in DC-

DC converters. Standard Product AO4824 is Pb-free

(meets ROHS & Sony 259 specifications). AO4824L

is a Green Product ordering option. AO4824 and

AO4824L are electrically identical.

V_DS(V) = 30V

I_D= 8.5A

I_D=9.8A

(V_GS= 10V)

(V_GS= 4.5V)

_DS(ON)< 17mΩ

<13mΩ

<15mΩ

R_DS(ON)< 27mΩ

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

V_DS

Max Q1

Max Q2

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

V_GS

±20

8.5

±12

9.8

T_A=25°C

T_A=70°C

I_D

6.8

7.8

Pulsed Drain Current^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Parameter: Thermal Characteristics MOSFET Q1

Symbol

Typ

Max

62.5

110

Units

Maximum Junction-to-Ambient^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient^A

Steady-State

Maximum Junction-to-Lead^C

Steady-State

°C/W

R_θJL

Parameter: Thermal Characteristics MOSFET Q2

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient^A

62.5

110

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient^A

Steady-State

Maximum Junction-to-Lead^C

Steady-State

°C/W

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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与AO4824相关器件

型号	品牌	获取价格	描述	数据表
AO4824L	AOS	获取价格	30V Dual N-Channel MOSFET
AO4824L (KO4824L)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4826	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4826	FREESCALE	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO4826	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°
AO4826	HOTTECH	获取价格	SOP-8
AO4826_10	AOS	获取价格	60V Dual N-Channel MOSFET
AO4826L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4828	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4828	FREESCALE	获取价格	60V Dual N-channel MOSFET