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AO4824L PDF预览

AO4824L

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
7页 184K
描述
30V Dual N-Channel MOSFET

AO4824L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.82
Is Samacsys:NBase Number Matches:1

AO4824L 数据手册

 浏览型号AO4824L的Datasheet PDF文件第2页浏览型号AO4824L的Datasheet PDF文件第3页浏览型号AO4824L的Datasheet PDF文件第4页浏览型号AO4824L的Datasheet PDF文件第5页浏览型号AO4824L的Datasheet PDF文件第6页浏览型号AO4824L的Datasheet PDF文件第7页 
AO4824L  
30V Dual N-Channel MOSFET  
General Description  
Features  
Q1  
VDS (V) = 30V  
ID = 8.5A  
Q2  
VDS(V) = 30V  
ID=9.8A  
The AO4824L uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters.  
(VGS = 10V)  
(VGS = 10V)  
(VGS = 4.5V)  
R
DS(ON) < 17m  
<13mΩ  
RDS(ON) < 27mΩ  
<15mΩ  
SOIC-8  
D1  
D2  
Top View  
Bottom View  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
1
2
3
4
8
7
6
5
G1  
G2  
S1  
S2  
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Max Q1  
Symbol  
Max Q2  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
±20  
30  
V
VGS  
±12  
9.8  
V
A
TA=25°C  
TA=70°C  
8.5  
Continuous Drain  
Current A  
Pulsed Drain Current B  
ID  
6.8  
7.8  
IDM  
30  
40  
TA=25°C  
TA=70°C  
2
2
PD  
W
°C  
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
Junction and Storage Temperature Range  
TJ, TSTG  
Parameter: Thermal Characteristics MOSFET Q1  
Typ  
Max  
Symbol  
Units  
Maximum Junction-to-Ambient A  
t 10s  
48  
62.5  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
°C/W  
74  
35  
110  
40  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
Parameter: Thermal Characteristics MOSFET Q2  
Typ  
Max  
Symbol  
Units  
Maximum Junction-to-Ambient A  
t 10s  
48  
74  
35  
62.5  
110  
40  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
°C/W  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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