Datasheet > AO4832_11

AO4832_11

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	552K
描述
30V Dual N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO4832_11 数据手册

AO4832

30V Dual N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4832 uses advanced trench technology to provide

excellent R_DS(ON)with low gate charge.

This device is suitable for high side switch in SMPS and

general purpose applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

10A

< 13mΩ

< 17.5mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 0: Jan. 2010

www.aosmd.com

Page 1 of 6

12 3 4 5 6

中文翻译

下载PDF

与AO4832_11相关器件

型号	品牌	获取价格	描述	数据表
AO4832L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO4836	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4836L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4838	FREESCALE	获取价格	30V Dual N-channel MOSFET
AO4838	AOS	获取价格	30V Dual N-Channel MOSFET
AO4838	HOTTECH	获取价格	SOP-8
AO4838 (KO4838)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4840	FREESCALE	获取价格	40V Dual N-channel MOSFET
AO4840	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4840	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°