Datasheet > AO4830

AO4830

更新时间： 2024-10-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	412K
描述
80V Dual N-channel MOSFET

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AO4830 数据手册

AO4830

80V Dual N-channel MOSFET

General Description

provide excellent R_DS(ON)and low gate charge . This

The AO4830 uses advanced trench technology to

device is suitable for use as a load switch or in PWM applications.

Features

V_DS(V) = 80V

I_D= 3.5A

(V_GS= 10V)

R_DS(ON)< 75mΩ

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±30

3.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

2.9

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

12.8

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

62.5

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

1/6

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与AO4830相关器件

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