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AO4830 PDF预览

AO4830

更新时间: 2024-11-20 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 412K
描述
80V Dual N-channel MOSFET

AO4830 数据手册

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AO4830  
80V Dual N-channel MOSFET  
General Description  
provide excellent RDS(ON) and low gate charge . This  
The AO4830 uses advanced trench technology to  
device is suitable for use as a load switch or in PWM applications.  
Features  
VDS (V) = 80V  
ID = 3.5A  
(VGS = 10V)  
(VGS = 10V)  
RDS(ON) < 75m  
SOIC-8  
D1  
D2  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
80  
V
V
Gate-Source Voltage  
VGS  
±30  
3.5  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
A
2.9  
Pulsed Drain Current C  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
18  
16  
A
mJ  
EAR  
12.8  
2
TA=25°C  
Power Dissipation B  
TA=70°C  
PD  
W
°C  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
62.5  
90  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
1/6  
www.freescale.net.cn  

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