AO4826L

更新时间： 2024-11-17 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	111K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AO4826L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

AO4826L 数据手册

AO4826

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4826 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO4826 is Pb-free

(meets ROHS & Sony 259 specifications). AO4826L

is a Green Product ordering option. AO4826 and

AO4826L are electrically identical.

V_DS(V) = 60V

I_D= 6.3A (V_GS= 10V)

_DS(ON)< 25mΩ (V_GS= 10V)

_DS(ON)< 30mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

T_A=25°C

T_A=70°C

6.3

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

62.5

110

R_θJA

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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