Datasheet > AO4832

AO4832

更新时间： 2024-11-19 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
7页	717K
描述
SOP-8

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AO4832 数据手册

AO4832

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 Low on-resistance:V_DS=30V,I_D=10A,R_DS(ON)≤13mΩ@V_GS=10V

 Low gate charge

 For high side switch in SMPS and general purpose applications.

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±20

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

Avalanche energy L=0.1mH

I_DM

I_AS,I_AR

E_AS,E_AR

1.3

T_A= 25°C

T_A= 70°C

Power dissipation

P_D

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

μA V_DS=30V,

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V =0V, I =250μA

I_DSS

I_GSS

±100

2.5

V^GS=0V

V_DS=0V,

VGS=±20V

1.5

1.9

V_GS(th)

V =V , I =250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

V^GS=10V

10.8

15.5

0.75

17.5

=10V, I =10A,

mΩ

Drain-source on-resistance

R_DS(ON)*

=10V, I =10A, T =125°C

VGS=4.5V, ID=8A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

V =5V, I =10A

IS=1A, VGS=0V

2.5

910

160

100

2.4

610

0.8

760

125

1.6

6.6

2.4

V_{DS=15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

nC V =4.5V,V =15V,I =10A

VGS=10V,VDS=15V,ID=10A

Total gate charge

Q_g

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Q_gs

Q_gd

t_d(on)

t_r

4.4

VGS=10V, VDS=15V,

RGEN=3Ω,RL=1.5Ω

t_d(off)

t_f

Turn-off delay time

Turn-off fall time

t_rr

Q_rr

5.5

6.4

9.6

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I =10A, dI/dt=500A/μ s

nC I =10A, dI/dt=500A/μ s

*Pulse test ; Pulse width =80µs, Duty cycle ≤0.5% .

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E-mail:hkt@heketai.com

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与AO4832相关器件

型号	品牌	获取价格	描述	数据表
AO4832 (KO4832)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4832_11	AOS	获取价格	30V Dual N-Channel MOSFET
AO4832L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO4836	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4836L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4838	FREESCALE	获取价格	30V Dual N-channel MOSFET
AO4838	AOS	获取价格	30V Dual N-Channel MOSFET
AO4838	HOTTECH	获取价格	SOP-8
AO4838 (KO4838)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4840	FREESCALE	获取价格	40V Dual N-channel MOSFET

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