Datasheet > AO4828

AO4828

更新时间： 2024-10-31 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	922K
描述
种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:6.5A;Vgs(th)(V):±20;漏源导通电阻:36mΩ@10V

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AO4828 数据手册

UMW

AO4828

Dual N-Channel MOSFET

Description

The AO4828 uses advanced trench technology

to provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

V_DS= 60V I_D= 6.5 A

R_DS(ON)< 36mΩ @ V_GS=10 V

R_DS(ON)< 47mΩ @ V_GS=4.5V

Application

Battery protection

Load switch

Uninterruptible power supply

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

Drain-Source Voltage

V_DS

V_GS

Gate-Source Voltage

+20

6.5

Drain Current, V_GS@ 4.5V³

I_D@T_A=25℃

I_D@T_A=70℃

Drain Current, V_GS@ 4.5V³

Pulsed Drain Current¹

Total Power Dissipation

IDM

2.1

P_D@T_A=25℃

Storage Temperature Range

-55 to 150

℃

TSTG

T_J

Operating Junction Temperature Range

Rthj-a

Maximum Thermal Resistance, Junction-

ambient³

℃/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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与AO4828相关器件

型号	品牌	获取价格	描述	数据表
AO4828 (KO4828)	KEXIN	获取价格	Dual N-Channel MOSFET
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AO4830 (KO4830)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4832	FREESCALE	获取价格	30V Dual N-channel MOSFET
AO4832	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO4832	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°
AO4832	HOTTECH	获取价格	SOP-8