Datasheet > AO4826

AO4826

更新时间： 2024-10-30 12:23:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
4页	179K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO4826 数据手册

AO4826

N-Channel Enhancement Mode Field

Effect Transistor

General Description

_DS(ON)and low gate charge. This

provide excellent R

The AO4826 uses advanced trench technology to

device is suitable for use as a load switch or in PWM

(meets ROHS & Sony 259 specifications). AO4826L

AO4826L are electrically identical.

applications.Standard Product AO4826 is Pb-free

is a Green Product ordering option. AO4826 and

Features

V_DS(V) = 60V

I_D= 6.3A (V_GS= 10V)

_DS(ON)< 25mΩ (V_GS= 10V)

_DS(ON)< 30mΩ (V_GS= 4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

T_A=25°C

T_A=70°C

6.3

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

62.5

110

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

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AO4826_10	AOS	获取价格	60V Dual N-Channel MOSFET
AO4826L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
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AO4828_10	AOS	获取价格	60V Dual N-Channel MOSFET
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