Datasheet > AO4838

AO4838

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
7页	705K
描述
SOP-8

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中文翻译

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数据手册

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AO4838 数据手册

AO4838

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 V_DS=30V,I_D=11A,R_DS(ON)≤9.6mΩ@V_GS=10V

 Low on-resistance

 For load switch and battery protection applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±20

1.3

150

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

Avalanche energy L=0.1mH

I_DM

I_AS,I_AR

E_AS,E_AR

T_A= 25°C

T_A= 70°C

Power dissipation

P_D

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

μA V_DS=30V,

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V =0V, I =250μA

I_DSS

I_GSS

±100

2.6

V^GS=0V

V_DS=0V,

VGS=±20V

1.5

V_GS(th)

V =V , I =250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

V^GS=10V

9.6

=10V, I =11A,

mΩ

Drain-source on-resistance

R_DS(ON)*

11.5

10.4

=10V, I =11A, T =125°C

VGS=4.5V, ID=10A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

V =5V, I =11A

0.7

2.5

IS=1A, VGS=0V

860 1080 1300

125

0.5

6.4

V_{DS=15V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

180

110

240

160

1.5

9.6

nC V =4.5V,V =15V,I =11A

VGS=10V,VDS=15V,ID=11A

Total gate charge

Q_g

3.4

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Q_gs

Q_gd

t_d(on)

t_r

VGS=10V, VDS=15V,

RGEN=3Ω,RL=1.35Ω

t_d(off)

t_f

Turn-off delay time

Turn-off fall time

t_rr

Q_rr

8.5

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I =11A, dI/dt=500A/μ s

nC I =11A, dI/dt=500A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

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E-mail:hkt@heketai.com

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与AO4838相关器件

型号	品牌	获取价格	描述	数据表
AO4838 (KO4838)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4840	FREESCALE	获取价格	40V Dual N-channel MOSFET
AO4840	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4840	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°
AO4840	HOTTECH	获取价格	SOP-8
AO4840 (KO4840)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4840_11	AOS	获取价格	40V Dual N-Channel MOSFET
AO4840L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4842	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4842	FREESCALE	获取价格	Dual N-Channel 30-V (D-S) MOSFET High power and current handling capability

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