Datasheet > AO4826

AO4826

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	385K
描述
种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:6.3A;Vgs(th)(V):±20;漏源导通电阻:25mΩ@10V

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AO4826 数据手册

AO4826

Dual N-Channel MOSFET

UMW

General Description

The AO4826 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

General Features

V_DS= 60V I_D=6.3 A

R_DS(ON)< 25mΩ @ V_GS=10V

R_DS(ON)< 30mΩ @ V_GS=4.5V

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 125 °C

Continuous Source Current (Diode Conduction) ^a

Pulsed Drain Current ^b

I_S

3.6

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

16.2

Maximum Power Dissipation ^b

P_D

T_C= 125 °C

1.3

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

110

UNIT

Junction-to-Ambient

PCB Mount ^c

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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与AO4826相关器件

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AO4826_10	AOS	获取价格	60V Dual N-Channel MOSFET
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AO4828_10	AOS	获取价格	60V Dual N-Channel MOSFET
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AO4830	AOS	获取价格	80V Dual N-Channel MOSFET
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