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AO4836 PDF预览

AO4836

更新时间: 2024-11-20 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 119K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO4836 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

AO4836 数据手册

 浏览型号AO4836的Datasheet PDF文件第2页浏览型号AO4836的Datasheet PDF文件第3页浏览型号AO4836的Datasheet PDF文件第4页 
AO4836  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4836 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. The  
two MOSFETs make a compact and efficient switch  
and synchronous rectifier combination for use in  
buck converters. It is ESD protected. AO4836 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO4836L is a Green Product ordering option.  
AO4836 and AO4836L are electrically identical.  
VDS (V) = 30V  
ID = 7.2A  
R
R
DS(ON) < 24m(VGS = 10V)  
DS(ON) < 40m(VGS = 4.5V)  
ESD rating: 1500V (HBM)  
D2  
S2  
D1  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±20  
TA=25°C  
TA=70°C  
7.2  
6.1  
ID  
A
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.44  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
55  
Max  
62.5  
110  
50  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
92  
37  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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