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AO4826_10 PDF预览

AO4826_10

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
4页 170K
描述
60V Dual N-Channel MOSFET

AO4826_10 数据手册

 浏览型号AO4826_10的Datasheet PDF文件第2页浏览型号AO4826_10的Datasheet PDF文件第3页浏览型号AO4826_10的Datasheet PDF文件第4页 
AO4826  
60V Dual N-Channel MOSFET  
General Description  
Product Summary  
The AO4826 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications.  
VDS (V) = 60V  
ID = 6.3A (VGS = 10V)  
RDS(ON) < 25m(VGS = 10V)  
R
DS(ON) < 30m(VGS = 4.5V)  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
Top View  
Bottom View  
D2  
D1  
Top View  
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
S2  
S1  
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
60  
V
V
Gate-Source Voltage  
VGS  
±20  
TA=25°C  
TA=70°C  
6.3  
Continuous Drain  
Current A  
Pulsed Drain Current B  
ID  
A
5
40  
IDM  
TA=25°C  
TA=70°C  
2
PD  
W
°C  
Power Dissipation  
1.28  
-55 to 150  
Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
50  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
73  
Maximum Junction-to-Lead C  
RθJL  
31  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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