Datasheet > AO4832

AO4832

更新时间： 2024-10-30 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	364K
描述
30V Dual N-channel MOSFET

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AO4832 数据手册

AO4832

30V Dual N-channel MOSFET

General Description

The AO4832 uses advanced trench technology to provide

excellent R

_DS(ON)with low gate charge.

general purpose applications.

This device is suitable for high side switch in SMPS and

Features

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

10A

< 13mΩ

< 17.5mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

1/6

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