Datasheet > AO4821L

AO4821L

更新时间： 2024-09-13 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	115K
描述
Dual P-Channel Enhancement Mode Field Effect Transistor

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技术参数
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替代型号

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AO4821L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82

AO4821L 数据手册

AO4821

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4821 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected. Standard Product

AO4821 is Pb-free (meets ROHS & Sony 259

specifications). AO4821L is a Green Product ordering

option. AO4821 and AO4821L are electrically

V_DS(V) = -12V

I_D= -8 A (V_GS= -4.5V)

R_DS(ON)< 18mΩ (V_GS= -4.5V)

R_DS(ON)< 22mΩ (V_GS= -2.5V)

R_DS(ON)< 29mΩ (V_GS= -1.8V)

ESD Rating: 4KV HBM

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-12

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

-8

T_A=25°C

T_A=70°C

I_D

-6.7

Pulsed Drain Current ^B

I_DM

-20

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^A

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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AO4821L 替代型号

型号	品牌	替代类型	描述	数据表
AO4821	AOS	完全替代	Dual P-Channel Enhancement Mode Field Effect Transistor

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