Datasheet > AO4822A_10

AO4822A_10

更新时间： 2024-11-17 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	304K
描述
30V Dual N-channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AO4822A_10 数据手册

AO4822A

30V Dual N-channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4822A uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

<19mΩ

< 26mΩ

ESD Protected

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

6.5

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

P_D

°C

T_A=70°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 4 : November 2010

www.aosmd.com

Page 1 of 6

12 3 4 5 6

中文翻译

下载PDF

与AO4822A_10相关器件

型号	品牌	获取价格	描述	数据表
AO4822AL	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4822L	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4824	FREESCALE	获取价格	Dual N-Channel 30-V (D-S) MOSFET High performance trench technology
AO4824	AOS	获取价格	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
AO4824L	AOS	获取价格	30V Dual N-Channel MOSFET
AO4824L (KO4824L)	KEXIN	获取价格	Dual N-Channel MOSFET
AO4826	AOS	获取价格	Dual N-Channel Enhancement Mode Field Effect Transistor
AO4826	FREESCALE	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AO4826	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°
AO4826	HOTTECH	获取价格	SOP-8