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AO4822A PDF预览

AO4822A

更新时间: 2024-10-30 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 115K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO4822A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:1.13Is Samacsys:N
最大漏极电流 (Abs) (ID):8 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

AO4822A 数据手册

 浏览型号AO4822A的Datasheet PDF文件第2页浏览型号AO4822A的Datasheet PDF文件第3页浏览型号AO4822A的Datasheet PDF文件第4页 
AO4822A  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4822A uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO4822A is Pb-free  
(meets ROHS & Sony 259 specifications).  
VDS (V) = 30V  
ID = 8.5A (VGS = 10V)  
R
DS(ON) < 16m(VGS = 10V)  
DS(ON) < 26m(VGS = 4.5V)  
R
AO4822AL is a Green Product ordering option.  
AO4822A and AO4822AL are electrically identical.  
D1  
S1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
8.5  
V
A
TA=25°C  
TA=70°C  
ID  
6.6  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
62.5  
110  
40  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  

AO4822A 替代型号

型号 品牌 替代类型 描述 数据表
AO4854 AOS

类似代替

30V Dual N-channel MOSFET
FDS6990A FAIRCHILD

功能相似

Dual N-Channel Logic Level PowerTrenchTM MOSFET

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