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AO4822 PDF预览

AO4822

更新时间: 2024-11-17 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 109K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

AO4822 技术参数

生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.74Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):8 A最大漏源导通电阻:0.019 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):115 pF
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AO4822 数据手册

 浏览型号AO4822的Datasheet PDF文件第2页浏览型号AO4822的Datasheet PDF文件第3页浏览型号AO4822的Datasheet PDF文件第4页 
AO4822  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4822 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO4822 is Pb-free  
(meets ROHS & Sony 259 specifications). AO4822L  
is a Green Product ordering option. AO4822 and  
AO4822L are electrically identical.  
VDS (V) = 30V  
ID = 8.5A (VGS = 10V)  
R
DS(ON) < 16m(VGS = 10V)  
DS(ON) < 26m(VGS = 4.5V)  
R
D1  
S1  
D2  
S2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±20  
8.5  
V
A
TA=25°C  
TA=70°C  
ID  
6.6  
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
62.5  
110  
40  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  

AO4822 替代型号

型号 品牌 替代类型 描述 数据表
TPC8210 TOSHIBA

功能相似

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)

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