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AO4822 PDF预览

AO4822

更新时间: 2024-11-17 12:52:15
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管开关光电二极管
页数 文件大小 规格书
6页 462K
描述
Dual N-Channel 30-V (D-S) MOSFET High performance trench technology

AO4822 数据手册

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Freescale  
AO4822/MC4822  
Dual N-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
PRODUCT SUMMARY  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
VDS (V)  
rDS(on) m()  
ID (A)  
10  
13.5 @ VGS = 10V  
20 @ VGS = 4.5V  
30  
8
1
2
3
4
8
7
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
6
5
Fast switching speed  
High performance trench technology  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VDS  
Limit  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±20  
TA=25oC  
TA=70oC  
10  
8.2  
±50  
2.3  
2.1  
1.3  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
A
W
oC  
TA=25oC  
TA=70oC  
Power Dissipationa  
PD  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RθJC  
Maximum Units  
Maximum Junction-to-Casea  
oC/W  
t <= 5 sec  
t <= 5 sec  
40  
Maximum Junction-to-Ambienta  
oC/W  
60  
RθJA  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
www.freescale.net.cn  
1

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