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AO3400 PDF预览

AO3400

更新时间: 2024-11-05 12:51:11
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 179K
描述
N-Channel Wnhancement Mode Field Effect Transistor

AO3400 数据手册

 浏览型号AO3400的Datasheet PDF文件第2页浏览型号AO3400的Datasheet PDF文件第3页浏览型号AO3400的Datasheet PDF文件第4页 
AO3400  
N-Channel Wnhancement Mode Field  
Effect Transistor  
General Description  
DS(ON) , low gate charge and  
device is suitable for use as a load switch or in PWM  
(meets ROHS & Sony 259 specifications). AO3400L  
The AO3400 uses advanced trench technology to provide excellent R  
operation with gate voltages as low as 2.5V. This  
applications.  
Standard Product AO3400 is Pb-free  
is a Green Product ordering option. AO3400 and AO3400L are electrically identical.  
Product Summary  
VDS (V) = 30V  
ID = 5.8 A (VGS = 10V)  
RDS(ON) < 28m(VGS = 10V)  
R
DS(ON) < 33m(VGS = 4.5V)  
DS(ON) < 52m(VGS = 2.5V)  
R
TO-236  
(SOT-23)  
Top View  
D
G
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
30  
±12  
V
V
VGS  
TA=25°C  
TA=70°C  
5.8  
ID  
4.9  
A
Pulsed Drain Current B  
IDM  
30  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
1
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
65  
85  
Max  
90  
125  
60  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
43  
1 / 4  
www.freescale.net.cn  

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