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AO3400 PDF预览

AO3400

更新时间: 2024-11-05 08:30:59
品牌 Logo 应用领域
金誉半导体 - HTSEMI /
页数 文件大小 规格书
3页 1849K
描述
30V N-Channel Enhancement Mode MOSFET

AO3400 数据手册

 浏览型号AO3400的Datasheet PDF文件第2页浏览型号AO3400的Datasheet PDF文件第3页 
AO3400  
30V N-Channel Enhancement Mode MOSFET  
VDS= 30V  
RDS(ON), Vgs@10V, Ids@5.8A < 28m  
RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ  
RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ  
Features  
Advanced trench process technology  
High Density Cell Design For Ultra Low On-Resistance  
Package Dimensions  
D
SOT-23-3L  
G
S
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
3.10  
2.95  
1.70  
0.50  
0.10  
Min.  
Max.  
A
B
C
D
E
2.70  
2.65  
1.50  
0.35  
0
G
H
K
J
1.90 REF.  
1.00  
0.10  
0.40  
0.85  
1.30  
0.20  
-
L
1.15  
F
0.45  
0.55  
M
0°  
10°  
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
VDS  
30  
± 12  
5.8  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
V
VGS  
ID  
A
IDM  
30  
TA = 25oC  
TA = 75oC  
1.4  
PD  
W
Maximum Power Dissipation  
1
TJ, Tstg  
RqJA  
-55 to 150  
145  
oC  
Operating Junction and Storage Temperature Range  
Junction-to-Ambient Thermal Resistance (PCB mounted)  
oC/W  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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