Datasheet > 2SK4126_0712

2SK4126_0712

更新时间： 2024-11-16 07:32:39

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
5页	67K
描述
General-Purpose Switching Device Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK4126_0712 数据手册

Ordering number : ENA0748A

2SK4126

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SK4126

Features

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.

•

Adoption of high reliability HVP process.

•

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

650

±30

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

2.5

170

150

°C

Allowable Power Dissipation

Tc=25°C (SANYO’s ideal heat dissipation condition)*1

Channel Temperature

Tch

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *2

Avalanche Current *3

132

*1 SANYO

’s condition is radiation from backside.

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

*2 V =99V, L=1mH, I =15A

*3 L≤1mH, single pulse

Marking : K4126

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

equipment.

's products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D0507 TI IM TC-00001054 / 61307QB TI IM TC-00000730 No. A0748-1/5

12 3 4 5

中文翻译

下载PDF

与2SK4126_0712相关器件

型号	品牌	获取价格	描述	数据表
2SK413	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 140V V(BR)DSS \| 8A I(D) \| TO-247VAR
2SK4136	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4137	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK4138	SANYO	获取价格	N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK414	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 160V V(BR)DSS \| 8A I(D) \| TO-247VAR
2SK4143	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET
2SK4143-S17-AY	NEC	获取价格	SWITCHING N-CHANNEL POWER MOS FET
2SK4144-AZ	NEC	获取价格	Power Field-Effect Transistor, 70A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me
2SK4144-S12-AZ	NEC	获取价格	Power Field-Effect Transistor, 70A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Me
2SK4145-S19-AY	NEC	获取价格	Power Field-Effect Transistor, 84A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta

与2SK4126_0712相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

13
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

35
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK4126_0712

2SK4126_0712 数据手册

与2SK4126_0712相关器件

与2SK4126_0712相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK4126_0712

2SK4126_0712 数据手册

与2SK4126_0712相关器件

与2SK4126_0712相关文章

您还可以找

您在本页遇到什么问题？