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2SK4125_12 PDF预览

2SK4125_12

更新时间: 2024-11-16 12:23:51
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 396K
描述
General-Purpose Switching Device Applications

2SK4125_12 数据手册

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Ordering number : ENA0747B  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SK4125  
Features  
ON-resistance R (on)=0.47 (typ.)  
Input capacitance Ciss=1200pF (typ.)  
10V drive  
Ω
DS  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
600  
±30  
17  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
DP  
PW 10 s, duty cycle 1%  
52  
A
μ
2.5  
170  
150  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25 C (SANYOs ideal heat dissipation condition)*1  
°
Channel Temperature  
Tch  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *2  
Avalanche Current *3  
E
78.8  
17  
AS  
I
AV  
1 SANYO’s condition is radiation from backside.  
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.  
2 V =50V, L=500μH, I =17A (Fig.1)  
*
DD  
3 L 500μH, single pulse  
AV  
*
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package : TO-3P-3L  
7539-002  
• JEITA, JEDEC : SC-65, TO-247, SOT-199  
• Minimum Packing Quantity : 30 pcs./magazine  
2SK4125-1E  
4.8  
15.6  
Marking  
Electrical Connection  
7.0  
1.5  
3.2  
2
K4125  
13.6  
LOT No.  
1
2.0  
3.0  
1.0  
0.6  
3
1
2
3
1 : Gate  
2 : Drain  
3 : Source  
5.45  
5.45  
SANYO : TO-3P-3L  
http://semicon.sanyo.com/en/network  
62012 TKIM/D0507 TIIM TC-00001053/51607QB TIIM TC-00000701  
No. A0747-1/7  

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