生命周期: | Transferred | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 6 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 10 W | 子类别: | Other Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ645 | SANYO |
获取价格 |
P CHANNEL MOS SILICON TRANSISTOR | |
2SJ646 | SANYO |
获取价格 |
2SJ646 | |
2SJ647 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ647 | RENESAS |
获取价格 |
400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSP, SC-70, 3 PIN | |
2SJ647-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
2SJ647-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70 | |
2SJ647-T1-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70 | |
2SJ647-T1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70 | |
2SJ648 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ648-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal |