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2SJ649

更新时间: 2024-11-09 03:56:39
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日电电子 - NEC /
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8页 79K
描述
MOS FIELD EFFECT TRANSISTOR

2SJ649 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ649  
SWITCHING  
P-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
PART NUMBER  
2SJ649  
PACKAGE  
The 2SJ649 is P-channel MOS Field Effect Transistor designed  
for solenoid, motor and lamp driver.  
Isolated TO-220  
FEATURES  
Low on-state resistance:  
RDS(on)1 = 48 mMAX. (VGS = –10 V, ID = –10 A)  
RDS(on)2 = 75 mMAX. (VGS = –4.0 V, ID = –10 A)  
Low input capacitance:  
Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)  
Built-in gate protection diode  
(Isolated TO-220)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
–60  
V
V
20  
20  
70  
m
m
m
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
25  
W
W
°C  
PT  
2.0  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150 °C  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
–20  
40  
A
EAS  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16332EJ1V0DS00 (1st edition)  
Date Published May 2003 NS CP(K)  
Printed in Japan  
2002  

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