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2SJ659(SMP-FD) PDF预览

2SJ659(SMP-FD)

更新时间： 2024-11-25 20:08:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 53K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,14A I(D),TO-263ABVAR

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2SJ659(SMP-FD) 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.06配置：Single
最大漏极电流 (Abs) (ID)：14 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：40 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

2SJ659(SMP-FD) 数据手册

 浏览型号2SJ659(SMP-FD)的Datasheet PDF文件第2页浏览型号2SJ659(SMP-FD)的Datasheet PDF文件第3页浏览型号2SJ659(SMP-FD)的Datasheet PDF文件第4页 
Ordering number : EN8584A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SJ659  
Features  
• Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
Motor drive, DC / DC converter.  
Avalanche resistance guarantee.  
•
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--60  
±20  
--14  
--56  
1.65  
40  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
85  
AS  
I
--14  
AV  
Note : *1 V =30V, L=500µH, I =--14A  
DD  
AV  
*2 L≤500µH, Single pulse  
Marking : J659  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
20707 TI IM TC-00000499 / N1805QA MS IM TB-00001072 No.8584-1/4  
1234

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