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2SJ660(SMP-FD) PDF预览

2SJ660(SMP-FD)

更新时间： 2024-11-25 20:00:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 39K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,26A I(D),TO-263ABVAR

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2SJ660(SMP-FD) 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.06配置：Single
最大漏极电流 (Abs) (ID)：26 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：50 W
子类别：Other Transistors表面贴装：YES
Base Number Matches：1

2SJ660(SMP-FD) 数据手册

 浏览型号2SJ660(SMP-FD)的Datasheet PDF文件第2页浏览型号2SJ660(SMP-FD)的Datasheet PDF文件第3页浏览型号2SJ660(SMP-FD)的Datasheet PDF文件第4页 
Ordering number : EN8585  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SJ660  
Features  
• Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
Motor drive, DC / DC converter.  
Avalanche resistance guarantee.  
•
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--60  
±20  
--26  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
--104  
1.65  
50  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
115  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
AS  
I
--26  
AV  
Note : *1 V =30V, L=200µH, I =--26A  
DD  
AV  
*2 L≤200µH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--1mA, V =0V  
Unit  
min  
--60  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=--60V, V =0V  
GS  
--1  
±10  
--2.6  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0V  
DS  
V (off)  
GS  
=--10V, I =--1mA  
--1.2  
11  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--13A  
19  
46  
67  
S
D
R
DS  
(on)1  
I
=--13A, V =--10V  
D GS  
60  
94  
mΩ  
mΩ  
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
=--13A, V =--4V  
D GS  
Marking : J660  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1805QA MSIM TB-00001077 No.8585-1/4  
1234

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