Datasheet > 2SJ663-TL

2SJ663-TL

更新时间： 2024-11-26 09:13:03

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
4页	38K
描述
Power Field-Effect Transistor, 9A I(D), 100V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN

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2SJ663-TL 数据手册

Ordering number : EN8588

2SJ663

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SJ663

Features

• Low ON-resistance.

•

Ultrahigh-speed switching.

•

4V drive.

•

Motor drive, DC / DC converter.

Avalanche resistance guarantee.

•

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--100

±20

-- 9

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

--36

1.65

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

-- 9

Note : *1 V =30V, L=1mH, I =--9A

*2 L≤1mH, Single pulse

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=--1mA, V =0V

Unit

min

--100

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

µA

(BR)DSS

=--100V, V =0V

--1

±10

--2.6

DSS

GSS

= ±16V, V =0V

V (off)

=--10V, I =--1mA

--1.2

Forward Transfer Admittance

yfs

=--10V, I =--5A

(on)1

=--5A, V =--10V

242

322

315

450

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=--5A, V =--4V

Marking : J663

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1805QA TS IM TB-00001314 No.8588-1/4

12 3 4

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与2SJ663-TL相关器件

型号	品牌	获取价格	描述	数据表
2SJ664	SANYO	获取价格	General-Purpose Switching Device
2SJ664(SMP)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,17A I(D),TO-220ABVAR
2SJ664-TL	ONSEMI	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.193ohm, 1-Element, P-Channel, Silicon, Me
2SJ665	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ665(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,27A I(D),TO-263ABVAR
2SJ665_12	SANYO	获取价格	General-Purpose Switching Device Applications
2SJ665-TL	ONSEMI	获取价格	Power Field-Effect Transistor, 27A I(D), 100V, 0.105ohm, 1-Element, P-Channel, Silicon, Me
2SJ666	SANYO	获取价格	General-Purpose Switching Device Applications
2SJ666(SMP)	ONSEMI	获取价格	Transistor,
2SJ666(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,36A I(D),TO-263ABVAR

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