Datasheet > 2SJ668_09

2SJ668_09

更新时间： 2024-11-25 07:32:03

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机
页数	文件大小	规格书
6页	189K
描述
Relay Drive, DC/DC Converter and Motor Drive

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中文翻译

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数据手册

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2SJ668_09 数据手册

2SJ668

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)

2SJ668

Relay Drive, DC/DC Converter and Motor Drive

Applications

Unit: mm

6.8 MAX.

5.2 ± 0.2

0.6 MAX.

z 4 V gate drive

z Low drain-source ON-resistance: R

= 0.12 Ω (typ.)

DS (ON)

z High forward transfer admittance: |Y | = 5.0 S (typ.)

z Low leakage current: I

= −100 μA (max) (V

= −60 V)

DSS

0.95 MAX.

z Enhancement mode: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

0.6 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

2.3 2.3

0.6 MAX.

Characteristic

Drain-source voltage

Symbol

Rating

Unit

−60

±20

−5

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

GSS

DC (Note 1)

Pulse(Note 1)

Drain current

−20

JEDEC

―

Drain power dissipation (Tc=25°C)

Single pulse avalanche energy

JEITA

SC-64

40.5

(Note 2)

TOSHIBA

2-7B1B

Avalanche current

−5

Weight: 0.36 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

6.5 ± 0.2

5.2 ± 0.2

150

0.6 MAX.

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

1.1 ± 0.2

0.8 MAX.

0.6 MAX.

1.05 MAX.

0.6 ± 0.15

Thermal Characteristics

2.3 ± 0.15

Characteristic

Symbol

Max

Unit

1. GATE

2. DRAIN

（HEAT SINK）

3. SOURSE

Thermal resistance, channel to case

Thermal resistance, channel to ambient

6.25

125

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −25 V, T = 25°C (initial), L = 2.2 mH, R = 25 Ω,

JEDEC

―

JEITA

= −5 A

TOSHIBA

2-7J1B

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

Weight: 0.35 g (typ.)

This transistor is an electrostatic-sensitive device. Handle with care.

2009-07-13

12 3 4 5 6

中文翻译

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与2SJ668_09相关器件

型号	品牌	获取价格	描述	数据表
2SJ669	TOSHIBA	获取价格	Silicon P-Channel MOS Type Relay Drive, DC/DC Converter and Motor Drive Applications
2SJ669_09	TOSHIBA	获取价格	Relay Drive, DC/DC Converter and Motor Drive
2SJ670	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ673	NEC	获取价格	Power Field-Effect Transistor, 36A I(D), 60V, 0.031ohm, 1-Element, P-Channel, Silicon, Met
2SJ676	TOSHIBA	获取价格	Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applicatio
2SJ676(TP)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,2.5A I(D),TO-251VAR
2SJ676_09	TOSHIBA	获取价格	Switching Regulator, DC/DC Converter and
2SJ680	TOSHIBA	获取价格	Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
2SJ680(Q)	TOSHIBA	获取价格	暂无描述
2SJ680_06	TOSHIBA	获取价格	Silicon P-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications

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