Datasheet > 2SJ661-DL-1E

2SJ661-DL-1E

更新时间： 2024-01-17 23:00:56

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	375K
描述
P-Channel Power MOSFET

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技术参数
数据手册

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2SJ661-DL-1E 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.28
Base Number Matches：	1

2SJ661-DL-1E 数据手册

Ordering number : EN8586A

2SJ661

P-Channel Power MOSFET

http://onsemi.com

–

60V, 38A, 39m , TO-262-3L/TO-263-2L

Features

•

ON-resistance R (on)1=29.5m (typ.)

4V drive

Input capacitance Ciss=4360pF (typ.)

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--60

±20

--38

--152

1.65

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Tc=25°C

Continued on next page.

unit : mm (typ)

Package Dimensions

7537-001

7535-001

2SJ661-1E

2SJ661-DL-1E

4.5

1.3

10.0

8.0

4.5

10.0

8.0

1.3

5.3

0.254

0.5

1.47

1.27

0.8

0.5

2.54

1 : Gate

2 : Drain

3 : Source

2 : Drain

3 : Source

4 : Drain

2.54

TO-262-3L

TO-263-2L

Product & Package Information

• Package : TO-262-3L

• Package : TO-263-2L

•

JEITA, JEDEC : TO-262

•

JEITA, JEDEC : SC-83, TO-263

Minimum Packing Quantity : 800pcs./reel

Minimum Packing Quantity

50pcs./magazine

Marking

Packing Type : DL

Electrical Connection

2, 4

J661

LOT No.

Semiconductor Components Industries, LLC, 2013

July, 2013

53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9

12 3 4 5 6 7...9

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