Datasheet > 2SJ660(SMP)

2SJ660(SMP)

更新时间： 2024-11-26 08:40:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	39K
描述
Transistor,

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中文翻译

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数据手册

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2SJ660(SMP) 数据手册

Ordering number : EN8585

2SJ660

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SJ660

Features

• Low ON-resistance.

•

Ultrahigh-speed switching.

•

4V drive.

•

Motor drive, DC / DC converter.

Avalanche resistance guarantee.

•

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--60

±20

--26

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

--104

1.65

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

115

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

--26

Note : *1 V =30V, L=200µH, I =--26A

*2 L≤200µH, Single pulse

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=--1mA, V =0V

Unit

min

--60

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

µA

(BR)DSS

=--60V, V =0V

--1

±10

--2.6

DSS

GSS

= ±16V, V =0V

V (off)

=--10V, I =--1mA

--1.2

Forward Transfer Admittance

yfs

=--10V, I =--13A

(on)1

=--13A, V =--10V

D GS

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=--13A, V =--4V

D GS

Marking : J660

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1805QA MSIM TB-00001077 No.8585-1/4

12 3 4

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与2SJ660(SMP)相关器件

型号	品牌	获取价格	描述	数据表
2SJ660(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,26A I(D),TO-263ABVAR
2SJ660-TL	ONSEMI	获取价格	Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Met
2SJ661	ONSEMI	获取价格	P-Channel Power MOSFET
2SJ661	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ661(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,38A I(D),TO-263ABVAR
2SJ661_12	SANYO	获取价格	General-Purpose Switching Device Applications
2SJ661-1E	ONSEMI	获取价格	P-Channel Power MOSFET
2SJ661-DL-1E	ONSEMI	获取价格	P-Channel Power MOSFET
2SJ661-TL	ONSEMI	获取价格	Power Field-Effect Transistor, 38A I(D), 60V, 0.056ohm, 1-Element, P-Channel, Silicon, Met
2SJ662	SANYO	获取价格	General-Purpose Switching Device Applications

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