5秒后页面跳转
捷配首页

Datasheet > 2SJ660
2SJ660 PDF预览

2SJ660

更新时间： 2024-11-25 03:45:15
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲通用开关
页数 文件大小 规格书
4页 43K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device

阅读下载

中文翻译

获取价格

2SJ660 技术参数

生命周期：Transferred包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.34Is Samacsys：N
雪崩能效等级（Eas）：115 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：26 A
最大漏源导通电阻：0.094 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：104 A认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SJ660 数据手册

 浏览型号2SJ660的Datasheet PDF文件第2页浏览型号2SJ660的Datasheet PDF文件第3页浏览型号2SJ660的Datasheet PDF文件第4页 
Ordering number : EN8585  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SJ660  
Features  
• Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
•
Motor drive, DC / DC converter.  
Avalanche resistance guarantee.  
•
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--60  
±20  
--26  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
A
D
Drain Current (Pulse)  
I
PW≤10µs, duty cycle≤1%  
--104  
1.65  
50  
A
DP  
W
W
°C  
°C  
mJ  
A
Allowable Power Dissipation  
P
D
Tc=25°C  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
--55 to +150  
115  
Avalanche Energy (Single Pulse) *1  
Avalanche Current *2  
E
AS  
I
--26  
AV  
Note : *1 V =30V, L=200µH, I =--26A  
DD  
AV  
*2 L≤200µH, Single pulse  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--1mA, V =0V  
Unit  
min  
--60  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=--60V, V =0V  
GS  
--1  
±10  
--2.6  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
= ±16V, V =0V  
DS  
V (off)  
GS  
=--10V, I =--1mA  
--1.2  
11  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--13A  
19  
46  
67  
S
D
R
DS  
(on)1  
I
=--13A, V =--10V  
D GS  
60  
94  
mΩ  
mΩ  
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
I
=--13A, V =--4V  
D GS  
Marking : J660  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1805QA MSIM TB-00001077 No.8585-1/4  
1234

中文翻译

下载PDF

与2SJ660相关器件

型号 品牌 获取价格 描述 数据表
2SJ660(SMP) ONSEMI

获取价格

 		Transistor,
2SJ660(SMP-FD) ONSEMI

获取价格

 		TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,26A I(D),TO-263ABVAR
2SJ660-TL ONSEMI

获取价格

 		Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Met
2SJ661 ONSEMI

获取价格

 		P-Channel Power MOSFET
2SJ661 SANYO

获取价格

 		P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ661(SMP-FD) ONSEMI

获取价格

 		TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,38A I(D),TO-263ABVAR
2SJ661_12 SANYO

获取价格

 		General-Purpose Switching Device Applications
2SJ661-1E ONSEMI

获取价格

 		P-Channel Power MOSFET
2SJ661-DL-1E ONSEMI

获取价格

 		P-Channel Power MOSFET
2SJ661-TL ONSEMI

获取价格

 		Power Field-Effect Transistor, 38A I(D), 60V, 0.056ohm, 1-Element, P-Channel, Silicon, Met

与2SJ660相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证